The 23rd ROEL Lecture Session was held inviting Dr. Junichi Takeya (Associate Prof., Scientific and Industrial Res., Osaka Univ.), Dr. Hiroshi Yamamoto (Lab. of Kato molecular Property of Materials, RIKEN), on December 22, 2011.,at ROEL conference room.
Associate Professor at Inst. of Scientific and Industrial Res., Osaka Univ., Dr. Junichi Takeya RIKEN Kato molecules properties of matter laboratory, Dr. Hiroshi Yamamoto

A summary: Because I speak "the organic single crystal transistor" which active research and development are performed, and does an organic single crystal with semiconductor activity range of by this report lecture, and organic molecules arrange the organic semiconductor single crystal materials with an approximately complete rhythm because the organic thin-film transistor (TFT) is the promising technique that low price can supply an active matrix display and system order device of the electronic paper by simple processes such as the print method or the vapor deposition, the influence of the crystal grain boundary in an irregularity of the structure in the macromolecule film and the low molecular polycrystalline film is characterized by a removed ideal transistor characteristic being provided and, particularly, introduces a recent study about application type existence airplane single crystal transistor array to balance high efficiency and productivity.
Incorporated administrative agency Institute of Physical and Chemical Research Kato molecules properties of matter laboratory Hiroshi Yamamoto
A summary: The motte insulator is the material system which is important as quality of tear-jerking story dealing with maternal affection of the high-temperature superconductor, and making it it is up the insulation for strong electronic correlation (coulomb repulsion) to work between carriers in that. When it is known that I am sensitive to band filling, and the properties of matter of the motte insulator perform filling control by field effect and chemical doping, it is thought that electron pro-phase transition gets up. If I make use of this characteristic and can manufacture the field effect transistor (phase transition transistor) of a new principle, I become the nanosize of the circuit, and the device which can support becoming it may develop electric power saving. We succeeded in manufacture of the FET which assumed an organic motte insulator channel materials by sticking a film single crystal of - Br) less than -(BEDT-TTF)2Cu[N(CN)2]Br( which was an organic motte insulator on 2/Si board. - Br is a material indicating the superconduction with the bulk, but a thermal contraction is controlled on the silicon substrate and, as a result, shows insulator-like behavior until low temperature. This device worked as FET of the n type when I took gate voltage in this state. In addition, it was revealed that the phase transition of the electronic system was taking place than the measurement of Hall effect and the Seebeck effect in the interface of the device. I introduce the latest result about the phase transition phenomenon by this lecture more. This study is collaborative investigation with 川椙義高, 中野匡規, Naoya Tajima, Takeo Fukunaga, Kazuhito Tsukagoshi, Masashi Kawasaki, Yoshihiro Iwasa, the Reizo Kato each person.