Inorganic/Organic Electronic Devices,
Chemical Vapor Deposition,
Analysis:
2012
1) "IR study of fundamental chemical reactions in atomic layer deposition of HfO2 with tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor", F. Hirose, Y. Kinoshita, K. Kanomata, K. Momiyama, S.Kubota, K. Hirahara, Y. Kimura, and M. Niwano, Appl. Surf. Sci., 258, 7726– 7731 (2012).

2) "Carrier mobility measurement across a single grain boundary in polycrystalline silicon using an organic gate thin-film transistor", M. Hashimoto, K. Kanomata, K. Momiyama, S. Kubota, and F. Hirose, Appl. Phys. Lett., 100, 023504-1-3 (2012).

2011
1) "Tungsten deposition by metal-chloride-reduction chemical vapor deposition", F. Hirose, T. Watanabe, A. Shibata, K. Momiyama, T. Suzuki, and H. Miya, Electrochem. Solid State Lett., 14, H251-H253 (2011).

2010
1) "Organic Gate Silicon Field Effect Transistors with Poly Methylmethacrylate Films for Science Education", F. Hirose, T. Miyagi, and Y. Narita, IEICE Trans. Electron., E93-C, 108-111 (2010).

2) "Atomic layer deposition of SiO2 from Tris(dimethylamino)silane and ozone by using temperature-controlled water vapor treatment", F. Hirose, Y. Kinoshita, S. Shibuya, Y. Narita, Y. Takahashi, H. Miya, K. Hirahara, Y. Kimura, and M. Niwano, Thin Solid Films, 519, 270-275 (2010).

2009
1) "P3HT/Al organic/inorganic heterojunction diodes investigated by I-V and C-V measurements", F. Hirose, Y. Kimura, and M. Niwano, IEICE Trans. Electron., E92-C, 1475-1478 (2009).